Threshold-Voltage Modeling of Body-Tied FinFETs (Bulk FinFETs)

摘要

The threshold voltages Vth of the body-tied double/triple-gate MOSFETs (bulk FinFETs) implemented on bulk silicon (Si) wafers were modeled systematically and compared with data obtained from 3-D device simulation. The threshold-voltage behaviors of the bulk FinFETs were modeled, for the first time, based on charge sharing. For the simplified Vth model, we considered not only short-channel effect (SCE) and narrow-width effect but also 3-D charge sharing at the corner. Only one fitting parameter is introduced to reflect the SCE in the fin body. The model predicted the Vth behavior with fin body thickness, body doping concentration, gate height, gate length, and corner shape of the fin body well. Our compact model makes an accurate prediction of Vth and shows good agreement with 3-D simulation data