Effect of Channel Width on the Electrical Characteristics of Amorphous/Nanocrystalline Silicon Bilayer Thin-Film Transistors

摘要

The effect of the channel width dimension on the electrical characteristics of amorphousanocrystalline silicon bilayer thin-film transistors (TFTs) is investigated. For comparison, nanocrystalline silicon monolayer TFTs are also studied. The experimental results show that the leakage current is decreased and the back-channel conduction is suppressed in bilayer channel devices. The overall results demonstrate that the performance of bilayer TFTs is enhanced with decreasing the channel width, which is attributed to the corner effect.