Modeling of Short-Channel Effects in Organic Thin-Film Transistors

摘要

We propose a model for short-channel organic thin-film transistors, which accounts for Poole-Frenkel field-dependent mobility and space-charge-limited current effects. The model is developed for devices operating in the linear regime, as well as in depletion and saturation regimes. Super linear output curves for low drain voltages, as well as nonsaturating currents, can be adequately described. Experimental results for short-channel P3HT devices have been fitted, showing good agreement with the proposed model.