Strained n-Channel FinFETs Featuring In Situ Doped Silicon–Carbon $(hbox{Si}_{1 - y}hbox{C}_{y})$ Source and Drain Stressors With High Carbon Content

摘要

Phosphorus in situ doped $ hbox{Si}_{1 - y}hbox{C}_{y}$ films (SiC:P) with substitutional carbon concentration of 1.7% and 2.1% were selectively grown in the source and drain regions of double-gate $ langle hbox{110}rangle$-oriented (110)-sidewall FinFETs to induce tensile strain in the silicon channel. In situ doping removes the need for a high-temperature spike anneal for source/drain (S/D) dopant activation and thus preserves the carbon substitutionality in the SiC:P films as grown. A strain-induced $I_{rm Dsat}$ enhancement of $sim$15% and $sim$ 22% was obtained for n-channel FinFETs with 1.7% and 2.1% carbon incorporated in the S/D, respectively.