A Charge-Based Model for Long-Channel Cylindrical Surrounding-Gate MOSFETs From Intrinsic Channel to Heavily Doped Body

Liu F.; He J.; Zhang L.; Zhang J.; Hu J.; Ma C.; Chan M.

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A Charge-Based Model for Long-Channel Cylindrical Surrounding-Gate MOSFETs From Intrinsic Channel to Heavily Doped Body

机译：从本征通道到重掺杂体的长通道圆柱形环绕栅极MOSFET的基于电荷的模型

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摘要

A charge-based model is presented for long-channel cylindrical surrounding-gate (SRG) MOSFETs from an intrinsic channel to a heavily doped body. The model derivation is based on an accurate inversion charge solution of Poisson''s equation in a cylindrical

机译：提出了一种基于电荷的模型，用于从本征沟道到重掺杂体的长沟道圆柱形环绕栅（SRG）MOSFET。模型推导基于圆柱体上泊松方程的精确反演电荷解

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《IEEE Transactions on Electron Devices》 |2008年第8期|p.2187-2194|共8页
作者
Liu F.; He J.; Zhang L.; Zhang J.; Hu J.; Ma C.; Chan M.;
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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);
原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
关键词
Compact model; device physics; doping concentration; drain current; surrounding-gate (SRG) MOSFET;

机译：紧凑型;器件物理;掺杂浓度;漏极电流;环绕栅（SRG）MOSFET;

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专利

1. Compact model for long-channel cylindrical surrounding-gate MOSFETs valid from low to high doping concentrations [J] . M. Cheralathan, A. Cerdeira, B. Iniguez Solid-State Electronics . 2011,第1期

机译：适用于低掺杂浓度到高掺杂浓度的长通道圆柱形环绕栅MOSFET的紧凑模型
2. A Charge-based Compact Model For Predicting The Current-voltage And Capacitance-voltage Characteristics Of Heavily Doped Cylindrical Surrounding-gate Mosfets [J] . Feilong Liu, Jian Zhang, Frank He, Solid-State Electronics . 2009,第1期

机译：一种基于电荷的紧凑模型，用于预测重掺杂圆柱形环绕栅MOSFET的电流-电压和电容-电压特性
3. Analytical modeling of the direct tunneling current through high-k gate stacks for long-channel cylindrical surrounding-gate MOSFETs [J] . Shi Lina, Zhuang Yiqi, Li Cong, Journal of Semiconductors . 2014,第3期

机译：通过高k栅堆叠的长沟道圆柱形环绕栅MOSFET的直接隧穿电流的分析模型
4. Continuous analytic current-voltage (I#x2013;V) model for long-channel doped surrounding-gate MOSFETs (SGMOSFETs) [C] . NamKi Cho, Seong Ho Choi, Nam Ho Kim, International Conference on Advanced Technologies for Communications . 2008

机译：用于长通道掺杂周围栅极MOSFET的连续分析电流 - 电压（I-V）模型（SGMOSFET）
5. Monolayer Doping for Fabrication of Recessed Channel MOSFETs [D] . Nudnure, Veena . 2019

机译：单层掺杂用于制造嵌入式通道MOSFET
6. Heavily-Doped Bulk Silicon Sidewall Electrodes Embedded between Free-Hanging Microfluidic Channels by Modified Surface Channel Technology [O] . Yiyuan Zhao, Henk-Willem Veltkamp, Thomas V. P. Schut, 2020

机译：通过改进的表面通道技术将重掺杂的块状硅侧壁电极嵌入到自由悬置的微流体通道之间
7. Experimental Study and Modeling of the gm-I Dependence of Long-Channel MOSFETs [O] . Michael Cheng, Vladimir Prodanov 2018

机译：长通道MOSFET的GM-I依赖的实验研究与建模

A Charge-Based Model for Long-Channel Cylindrical Surrounding-Gate MOSFETs From Intrinsic Channel to Heavily Doped Body

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