A Polycrystalline Silicon Thin-Film Transistor With Self-Aligned Metal Electrodes Formed Using Aluminum-Induced Crystallization

摘要

A low-temperature technology for the fabrication of a polycrystalline silicon (poly-Si) thin-film transistor (TFT) with self-aligned metal electrodes (SAMEs) is demonstrated. The conventional poly-Si source and drain regions are amorphized by self-aligned