A Study of Gate-Sensing and Channel-Sensing (GSCS) Transient Analysis Method Part II: Study of the Intra-Nitride Behaviors and Reliability of SONOS-Type Devices

Du P.-Y.; Lue H.-T.; Wang S.-Y.; Huang T.-Y.; Hsieh K.-Y.; Liu R.; Lu C.-Y.

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A Study of Gate-Sensing and Channel-Sensing (GSCS) Transient Analysis Method Part II: Study of the Intra-Nitride Behaviors and Reliability of SONOS-Type Devices

机译：栅极感应和通道感应（GSCS）瞬态分析方法的研究第二部分：SONOS型器件的氮化物内行为和可靠性研究

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For the first time, we can directly investigate the charge transport and intra-nitride behaviors of SONOS-type devices by exploiting the gate-sensing and channel-sensing (GSCS) method. Our results clearly indicate that for electron injection (

机译：首次，我们可以通过利用栅极感应和通道感应（GSCS）方法直接研究SONOS型器件的电荷传输和氮化物内部行为。我们的结果清楚地表明，对于电子注入（

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来源
《IEEE Transactions on Electron Devices》 |2008年第8期|p.2229-2237|共9页
作者
Du P.-Y.; Lue H.-T.; Wang S.-Y.; Huang T.-Y.; Hsieh K.-Y.; Liu R.; Lu C.-Y.;
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作者单位

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);
原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
关键词
GSCS method; Gate-sensing and channel-sensing (GSCS); SONOS; intra-nitride charge transport; nitride trap vertical location;

机译：GSCS方法;栅极感应和通道感应（GSCS）;SONOS;氮化物内部电荷传输;氮化物阱垂直位置;

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1. A Study of Gate-Sensing and Channel-Sensing (GSCS) Transient Analysis Method—Part I: Fundamental Theory and Applications to Study of the Trapped Charge Vertical Location and Capture Efficiency of SONOS-Type Devices [J] . Lue H.-T., Du P.-Y., Wang S.-Y., IEEE Transactions on Electron Devices . 2008,第8期

机译：栅极感应和通道感应（GSCS）瞬态分析方法的研究-第一部分：SONOS型设备的陷阱电荷垂直位置和捕获效率研究的基础理论和应用
2. Study of the Gate-Sensing and Channel-Sensing Transient Analysis Method for Monitoring the Charge Vertical Location of SONOS-Type Devices [J] . Du P.-Y., Lue H.-T., Wang S.-Y., IEEE transactions on device and materials reliability . 2007,第3期

机译：用于监测SONOS型器件的电荷垂直位置的门感测和通道感测瞬态分析方法的研究
3. Study of charge trapping characteristics of SONOS with various trapping layers using gate-sensing and channel-sensing (GSCS) method [J] . Jeng-Hwa Liao, Hsing-Ju Lin, Hang-Ting Lue, Solid-State Electronics . 2013,第mara期

机译：利用栅极感应和通道感应（GSCS）方法研究具有不同俘获层的SONOS的电荷俘获特性
4. STUDY OF INTRA-NITRIDE CHARGE TRANSPORT OF SONOS-TYPE DEVICES USING GATE-SENSING AND CHANNEL-SENSING TRANSIENT ANALYSIS METHOD [C] . Pei-Ying Du, Hang-Ting Lue, Szu-Yu Wang, International Symposium on VLSI Technology, Systems and Applications . 2008

机译：使用栅极感测和频道传感瞬态分析方法研究SONOS型器件内氮化物电荷传输的研究
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A Study of Gate-Sensing and Channel-Sensing (GSCS) Transient Analysis Method Part II: Study of the Intra-Nitride Behaviors and Reliability of SONOS-Type Devices

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