An Augmented Small-Signal HBT Model With Its Analytical Based Parameter Extraction Technique

摘要

This paper presents a simple and systematic extraction technique for an augmented heterojunction bipolar transistor (HBT) small-signal model with improved representation for the intrinsic base and external base-collector junction. The extraction results for a $hbox{1} times hbox{10} mu hbox{m}^{2}$ HBT allow the investigation of the validity of the usual representation of ac emitter current crowding, as a capacitance in shunt with the spreading resistance.