Analysis of a Narrow-Base Lateral IGBT With Double Buried Layer for Junction-Isolated Smart-Power Technologies

摘要

An n-type lateral insulated gate bipolar transistor (nLIGBT) with a double buried layer structure is studied. This device is integrated in an existing smart-power junction-isolated technology with a 0.35- $muhbox{m}$ CMOS core without adding extra mask steps. The double buried layer underneath the active nLIGBT not only renders this a floating device (i.e., it can be used as a high-side switch) but also suppresses the substrate current effectively, and, what is more, it introduces a buried hole diverter. As a consequence, this device has a wide safe operating area and switches off extremely fast with no current tail. The device''s static and dynamic behavior is analyzed through 2-D numerical simulations. Finally, the device is compared to the rivaling drain extended MOSFET transistor in this technology.