首页> 外文期刊>IEEE Transactions on Electron Devices >Analysis of a Narrow-Base Lateral IGBT With Double Buried Layer for Junction-Isolated Smart-Power Technologies
【24h】

Analysis of a Narrow-Base Lateral IGBT With Double Buried Layer for Junction-Isolated Smart-Power Technologies

机译:结隔离型智能功率技术的双埋层窄基横向IGBT的分析

获取原文
获取原文并翻译 | 示例

摘要

An n-type lateral insulated gate bipolar transistor (nLIGBT) with a double buried layer structure is studied. This device is integrated in an existing smart-power junction-isolated technology with a 0.35- $muhbox{m}$ CMOS core without adding extra mask steps. The double buried layer underneath the active nLIGBT not only renders this a floating device (i.e., it can be used as a high-side switch) but also suppresses the substrate current effectively, and, what is more, it introduces a buried hole diverter. As a consequence, this device has a wide safe operating area and switches off extremely fast with no current tail. The device''s static and dynamic behavior is analyzed through 2-D numerical simulations. Finally, the device is compared to the rivaling drain extended MOSFET transistor in this technology.
机译:研究了具有双埋层结构的n型横向绝缘栅双极型晶体管(nLIGBT)。该器件集成在具有0.35美元muhbox {m} $ CMOS内核的现有智能电源结隔离技术中,而无需增加额外的掩模步骤。有源nLIGBT下方的双掩埋层不仅使其成为浮动器件(即可以用作高端开关),而且还有效抑制了衬底电流,而且还引入了掩埋空穴转向器。因此,该设备具有宽广的安全操作区域,并且在没有电流尾的情况下非常快速地关闭。该设备的静态和动态行为通过二维数值模拟进行了分析。最后,将该器件与该技术中可与之竞争的漏极扩展MOSFET晶体管进行比较。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号