Oxide Semiconductor-Based Organic/Inorganic Hybrid Dual-Gate Nonvolatile Memory Thin-Film Transistor

摘要

An organic/inorganic hybrid dual-gate (DG) nonvolatile memory thin-film transistor (M-TFT) was proposed as a device with high potential for implementing large-area electronics on flexible and/or transparent substrates. The active channel and bottom and top gate insulators (GIs) of the M-TFT were composed of In–Ga–Zn–O, $hbox{Al}_{2}hbox{O}_{3}$, and poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)], respectively. It was confirmed that the fabricated DG M-TFT showed excellent device characteristics, in which the obtained field-effect mobility, subthreshold swing, and on/off ratio were approximately 32.1 $hbox{cm}^{2} hbox{V}^{-1} hbox{s}^{-1}$, 0.13 V/dec, and $hbox{10}^{8}$, respectively. It was also successfully demonstrated that the DG configuration for the proposed M-TFT could effectively work for improving the device controllability by individually controlling the bias conditions of the top gate and bottom gate (BG). The turn-on voltage could be dynamically modulated and controlled when an appropriate fixed negative voltage was applied to the BG. The required duration of the programming pulse to obtain a memory margin of more than 10 could be reduced to 100 $muhbox{s}$. These results correspond to the first demonstration of a hybrid-type DG M-TFT using a ferroelectric copolymer GI/oxide semiconducting active channel structure and demonstrate the feasibility of a promising memory device embeddable in a large-area electronic system.