Characterization of the Depth Distribution and Electrical Activation and Deactivation of Ion Implanted Dopants in Silicon

摘要

Electrical-assisted diffusion of carriers is proposed as a hypothesis of major dopant deactivation kinetics. New metrology methods, including SIMS/ARXPS and continuous anodic oxidation technique/differential Hall effect methods, are used in this paper to supply supporting evidences and data. The n-type (P- and As-based) implants show more serious deactivation, but similar reactivation to p-type (B-based) implants, which can be interpreted by the electrical-assisted diffusion mechanism. Reactivation occurs only when the excess dopants exist—dopant concentration is higher than its electrically active solid solubility limit.