UV Photodetector of a Homojunction Based On p-Type Sb-Doped ZnO Nanoparticles and n-Type ZnO Nanowires

摘要

The highly dense n-type zinc oxide (ZnO) nanowires (NWs)/p-type ZnO:Sb nanoparticles (NPs) growth on glass substrate. An energy dispersive X-ray mapping demonstrates that Sb element is present in the nanostructures (NSs) and the doping Sb concentration is 1.52 atomic%. The XRD spectrum reveals ZnO wurtzite and ${rm Sb}_{2}{rm O}_{3}$ cubic structures. Additionally, the PL spectrum of the ZnO:Sb sample includes strong peaks at approximately 390 and 521 nm. HRTEM images indicate that p-ZnO:Sb NPs and n-ZnO NWs are polycrystalline and single crystalline structures, respectively. The $I{-}V$ curve reveals that the measured currents in the ZnO NWs to ZnO:Sb NSs were increased by a factor of ${sim}{13}$ at 5 V. The UV-to-visible rejection ratio of the ZnO:Sb sample was ${sim}{3.19}$ at 5 V. The maximum quantum efficiency of the ZnO:Sb sample was approximately 46.5% when the incident light was 390 nm. Furthermore, the dynamic response of the ZnO:Sb sample UV photodetector was stable and reproducible. The measured current under UV light exceeded the dark current by around 11 $mu{rm A}$ .