A 3-D Stackable Maskless Embedded Metal-Gate Thin-Film-Transistor Nanowire for Use in Bioelectronic Probing

摘要

Using a self-aligned sidewall microcrystalline-silicon $(mu{rm c}hbox{-}{rm Si})$ dual channel, comprising a sub-50-nm channel width, a novel 3-D stackable maskless embedded metal-gate thin-film-transistor nanowire device was fabricated on top metal using a tungsten gate-stack and trilayered oxideitride/oxide gate dielectric. The results of using a charge-transferring mechanism based on the solution-phased pH of a phosphate buffer solution and vascular endothelial growth factor showed that $mu{rm c}hbox{-}{rm Si}$ surfaces exhibit high potential for use in bioelectronics. The device exhibits long-term reliability regarding bioelectronic probing and is as reliable as the commercially available enzyme-linked immunosorbent assay when conducting a targeted, 100-day therapy for ovarian cancer. Thus, the proposed device exhibits potential for use in label-free, economical, and highly reliable lab-on-chip 3-D applications.