Thermal Rectifier Based on p-n Junction

摘要

We propose a novel thermal rectifier based on p-n junction. The thermal rectification effect in the Si p-n junction system was demonstrated experimentally and explained theoretically. It was shown that heat flow from n- to p-type domain is greater than that from p-type to n-type domain. The thermal rectification factor obtained experimentally (evaluated theoretically) was 1.3 $({sim}{1.43})$ .