Technique and setup for diagnostics of p-n junction to case thermal resistance in high-power gallium nitride LEDs

摘要

We present a setup and procedure of studying p-n junction to case thermaludresistance in high-power light-emitting diodes (LEDs) from their thermal relaxation. Audset of LEDs mounted on a metal-core printed circuit board (MCPCB) were studied. Theudcontributions to the total thermal resistance from a heavy heat sink, MCPCB, heat slugudand LED chip are separated.