Comparative Performance Analysis of the Dielectrically Modulated Full- Gate and Short-Gate Tunnel FET-Based Biosensors

摘要

In this paper, a short-gate tunneling-field-effect-transistor (SG-TFET) structure has been investigated for the dielectrically modulated biosensing applications in comparison with a full-gate tunneling-field-effect-transistor structure of similar dimensions. This paper explores the underlying physics of these architectures and estimates their comparative sensing performance. The sensing performance has been evaluated for both the charged and charge-neutral biomolecules using extensive device-level simulation, and the effects of the biomolecule dielectric constant and charge density are also studied. In SG-TFET architecture, the reduction of the gate length enhances its drain control over the band-to-band tunneling process and this has been exploited for the detection, resulting to superior drain current sensitivity for biomolecule conjugation. The gate and drain biasing conditions show dominant impact on the sensitivity enhancement in the short-gate biosensors. Therefore, the gate and drain bias are identified as the effective design parameters for the efficiency optimization.