SHORT-GATE TUNNELLING FIELD-EFFECT TRANSISTOR OF VERTICAL NON-UNIFORM DOPED CHANNEL AND PREPARATION METHOD THEREFOR

摘要

A short-gate tunnelling field-effect transistor of a vertical non-uniform doped channel and a preparation method therefor. The short-gate tunnelling field-effect transistor has a vertical channel and the doping of a channel region is slowly varying non-uniform doping, the doping densities of the channel are in Gaussian distribution along the vertical direction, the doping density of the channel in the position close to a drain terminal is higher, and the doping density of the channel in the position close to a source terminal is lower; in addition, both sides of the vertical channel are provided with dual control gates and the control gates are of an L-shaped short-gate structure, there is an area not covered with a gate in the channel close to the drain terminal, and there is an area covered with the gate in a source region. Compared with the existing TFET, the short-gate tunnelling field-effect transistor disclosed by the present invention has the advantages that the influence of a drain terminal electric field on the tunnelling width at a source terminal tunnelling junction is effectively suppressed, the super e exponential relationship of an output tunnelling current on a drain terminal voltage is weakened, and the output characteristic of a device is obviously improved. Meanwhile, the tunnelling field-effect transistor is also beneficial to increase the device conducting current, so as to obtain a steeper subthreshold slope.