Gate-Ail-Around Tunnel Field-Effect Transistor (GAA TFET) with Vertical Channel and n-doped Layer

摘要

We propose a vertical gate-all-around tunnel field-effect transistor (GAA TFET) having a n-doped layer and investigate its electric characteristics with device simulation. By introducing the n-doped layer at source junction, band-to-band tunneling area is increased and energy barrier width is decreased. Also, surrounding gate structure improves the gate controllability, which makes it possible to obtain more abrupt band-bending induced by gate bias. The device shows subthreshold swing at I_d = 1 nA/μm of 32.5 mV/dec, average subthreshold swing of 20.6 mV/dec. With comparison with other TFET devices, the strength of the proposed device is demonstrated and performance dependences on device parameters are characterized.