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机译:多层TiNi合金作为nMOS In0.53Ga0.47As栅金属的研究
Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu, Taiwan;
Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu, Taiwan;
Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu, Taiwan;
Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu, Taiwan;
Department of Electrical Engineering and Computer Sciences, University of California at Berkeley, Berkeley, CA, USA;
Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu, Taiwan;
Department of Materials Science and Engineering and the Department of Electronics Engineering, International College of Semiconductor Technology, National Chiao Tung University, Hsinchu, Taiwan;
Annealing; Hafnium compounds; Nickel; Logic gates; Atomic layer deposition; Nonhomogeneous media;
机译:Ru-ZR金属合金用作NMOS器件中的栅电极的研究
机译:δ掺杂IN0.53GA0.47AS / INP阶梯式多栅极金属氧化物半导体效应晶体管的静电和射频性能研究
机译:In0.53Ga0.47As / In0.52Al0.48As量子阱金属氧化物半导体场效应晶体管中栅极电容的物理研究
机译:核磁共振研究金属多层的磁性和结构
机译:具有高K电介质和金属栅电极的按比例缩放的NMOS器件的闪烁噪声
机译:的N2-还原催化剂HIpTN3N的mo(III)的质子化研究通过ENDOR光谱
机译:Mossbauer探针原子(固态化学-人工晶格合金)研究的M / Au金属多层膜(M = Fe,Co,Ni)中Au层的磁极化