NMOS CVD ALD NMOS METAL GATE MATERIALS MANUFACTURING METHODS AND EQUIPMENT USING CVD AND ALD PROCESSES WITH METAL BASED PRECURSORS

摘要

Embodiments of the present invention generally provide methods and compositions for depositing metal-containing materials. The methods include deposition processes that form metals, metal carbides, metal suicides, metal nitrides and metal carbide derivatives by a vapor deposition process that includes pyrolysis, CVD, pulsed CVD or ALD. In one embodiment, depositing a dielectric material having a dielectric constant of greater than 10, forming feature definitions in the dielectric material, depositing a conformally work-function material on the sidewalls and bottom of the feature definition, and Depositing a metal gate fill material over the work function material to fill the feature definition,_YWherein M is tantalum, hafnium, titanium and lanthanum, X is a halide selected from the group consisting of fluorine, chlorine, bromine or iodine, y is at least one metal halide precursor having the formula 3 to 5, are provided.;