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Efficient Modeling of Distributed Dynamic Self-Heating and Thermal Coupling in Multifinger SiGe HBTs

机译:多指SiGe HBT中分布式动态自热和热耦合的高效建模

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In this paper, we propose an efficient model for dynamic self-heating and thermal coupling in a multifinger transistor system. Essentially, the proposed model is an improvement over a state-of-the-art existing model from the viewpoint of simulation time. Verilog-A implementation of the proposed model does not require to use any voltage controlled voltage source. In a multifinger transistor system, with n emitter fingers, our model uses 3n extra nodes in Verilog-A implementation whereas it is 2n2-n for the state-of-the-art model. Note that our model requires no extra nodes for implementing the thermal coupling effects. We present that the transient simulation results of our model are identical with those of the state-of-the-art model. Electrothermal simulation using the proposed thermal model shows good agreement with the measured data. It is found that the proposed model simulates more than 40% faster compared with the existing model for a ring oscillator circuit.
机译:在本文中,我们提出了一个有效的模型,用于多指晶体管系统中的动态自热和热耦合。从仿真时间的角度来看,从本质上讲,所提出的模型是对现有技术模型的改进。建议模型的Verilog-A实现不需要使用任何压控电压源。在具有n个发射极指的多指晶体管系统中,我们的模型在Verilog-A实现中使用了3n个额外的节点,而对于最先进的模型,则为2n2-n。请注意,我们的模型不需要额外的节点即可实现热耦合效应。我们提出,我们模型的瞬态仿真结果与最新模型的瞬态仿真结果相同。使用所提出的热模型进行的电热模拟与测量数据显示出良好的一致性。结果发现,与现有的环形振荡器电路模型相比,该模型的仿真速度提高了40%以上。

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