Charge-Based Modeling of Double-Gate and Nanowire Junctionless FETs Including Interface-Trapped Charges

摘要

Nanowire (NW) semiconductors are interesting devices for being used as sensors. Such NWs are doped silicon channels with electrical contacts at both ends, which is a kind of the so-called junctionless (JL) device. However, in contrast with the state-of-the-art CMOS FETs, a relatively high concentration of traps is expected when using these architectures as biosensors, since their surface is supposed to be in contact with chemicals and gases. A major concern is that these traps will substantially modify the charge–voltage characteristics, thus asking for improvement of basic compact models. In this respect, we have included the effect of interface traps in NW and double-gate JL devices through a charge-based model that has been developed previously. The soundness of this approach is confirmed by extensive comparisons with numerical technology computer-aided design simulation, while the analytical formulation helps understanding the most relevant parameters of the traps with respect to the technology.