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Negative Capacitance Double-Gate Junctionless FETs: A Charge-Based Modeling Investigation of Swing, Overdrive and Short Channel Effect

机译：负电容双栅极连接FETS：一种基于电荷的摆动建模调查，过驱动和短信道效应

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Amin Rassekh; Jean-Michel Sallese; Farzan Jazaeri; Morteza Fathipour; Adrian M. Ionescu;
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年度 2020
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1. A Short-Channel-Effect-Degraded Noise Margin Model for Junctionless Double-Gate MOSFET Working on Subthreshold CMOS Logic Gates [J] . Te-Kuang Chiang IEEE Transactions on Electron Devices . 2016,第8期

机译：用于亚阈值CMOS逻辑门的无结双栅极MOSFET的短通道效应降低的噪声容限模型
2. A two-dimensional analytical model for short channel junctionless double-gate MOSFETs [J] . Chunsheng Jiang, Renrong Liang, Jing Wang, AIP Advances . 2015,第5期

机译：短通道无结双栅极MOSFET的二维分析模型
3. A subthreshold current model for nanoscale short channel junctionless MOSFETs applicable to symmetric and asymmetric double-gate structure [J] . Xiaoshi Jin, Xi Liu, Hyuck-In Kwon, Solid-State Electronics . 2013,第apra期

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4. Analytical drain current model for long-channel double-gate negative capacitance junctionless transistors using Landau theory [C] . Chunsheng Jiang, Renrong Liang, Jing Wang, IEEE International Conference on Electron Devices and Solid-State Circuits . 2016

机译：基于Landau理论的长沟道双栅负电容无结晶体管的分析漏电流模型
5. Investigation of the gate capacitance characteristics of short channel MOSFETs [D] . Karabatsos, Christos P. 1989

机译：短通道MOSFET栅极电容特性研究
6. Nanowire Tunnel FET with Simultaneously Reduced SubthermionicSubthreshold Swing and Off-Current due to Negative Capacitance andVoltage Pinning Effects [O] . Ali Saeidi, Teodor Rosca, Elvedin Memisevic, -1

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7. A two-dimensional analytical model for short channel junctionless double-gate MOSFETs [O] . Chunsheng Jiang, Renrong Liang, Jing Wang, 2015

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8. Modelling short channel mosfets for use in VLSI [R] . Klafter, Alex, Pilorz, Stuart, Polosa, Rosa Loguercio, 1986

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Negative Capacitance Double-Gate Junctionless FETs: A Charge-Based Modeling Investigation of Swing, Overdrive and Short Channel Effect

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