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机译:使用双峰鳍阵列III–V隧道二极管在(001)硅基板上整体生长的三态存储单元
Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Hong Kong;
Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Hong Kong;
Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Hong Kong;
Silicon; Voltage measurement; Gallium arsenide; Resistors; Substrates; Resistance; Junctions;
机译:(001)硅衬底上的GaAs-InGaAs-GaAs鳍状阵列隧道二极管,室温峰谷电流比为5.4
机译:(001)硅基板上具有可调滞后的鳍式阵列隧道触发器
机译:精确(001)Si衬底上基于隧道二极管的逆变器的单片集成
机译:(001)硅衬底上基于III族氮化物纳米线阵列的1.3μm单片光子集成电路
机译:通过在碳化硅和硅衬底上热生长的二氧化硅的隧穿。
机译:在单晶MgO(001)基底上生长的FeRh外延层中基底诱导的应变场
机译:GaAs-Ingaas-Gaas Fin阵列(001)Si基板上的隧道二极管,房间温度峰值与谷电流比为5.4
机译:在预图案化和非图案化Gaas(100)衬底上生长的(0.25)Ga(0.75)as / alas基谐振隧道二极管