Low-Loss SOI-LIGBT With Triple Deep-Oxide Trenches

摘要

A novel 500-V silicon-on-insulator lateral insulated gate bipolar transistor (SOI-LIGBT) is proposed for the first time in this paper. The device features triple deep-oxide trenches (TDOT) arranged in the drift region. The depths of the trenches near the emitter side ( and near the collector side ( are shallower than that of the trench ( located in the silicon region between and . Compared with a reported SOI-LIGBT with dual deep-oxide trenches (DDOT), the shallow trench near the emitter side ( in the proposed TDOT SOI-LIGBT alleviates the JFET effect between the P-body region and , resulting in a lower on-state voltage drop ( . In the off-state, the electric potential sustained by the TDOT is higher than that of the DDOT. At the same breakdown voltage of 560 V, the length of silicon region between and N-buffer region ( is reduced from for the DDOT SOI-LIGBT to for the proposed TDOT SOI-LIGBT, indicating a smaller number of stored carries at the collector side and thereby a faster turn-off in the proposed TDOT SOI-LIGBT. The experiments demonstrate that the proposed TDOT SOI-LIGBT achieves turn-off loss ( % lower than the DDOT SOI-LIGBT at the same of 1.53 V.