机译:具有改善的抗短路能力的500 V双栅极深氧化物沟槽SOI-LIGBT
Southeast University, People's Republic of China;
insulated gate bipolar transistors; silicon-on-insulator; buried oxide; collector side; drift region; dual gate deep-oxide trench SOI-LIGBT; dual trench gate; emitter-side field plate; heat dissipation path; hole current; hole inversion layer; improved short-circuit immunity; lateral electric field; lateral insulated gate bipolar transistor; on-state negative voltage; silicon-on-insulator; voltage -5 V; voltage 500 V;
机译:沟槽栅和平面栅U形沟道SOI-LIGBT的短路特性比较
机译:双通道沟槽栅极隧道FET可改善导通电流和亚阈值摆幅
机译:一种新型双栅极SOI MOSFET,可通过双SiGe沟槽改善浮体效应
机译:具有改善的短路抗扰性的高性能600V沟道IGBT
机译:U型沟槽门控金属氧化物硅结构的电学研究。
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机译:噪声免疫电介质调制双沟透明栅极工程MOSFET作为标签免费生物传感器:提案和调查