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机译:基于非线性微波电流瞬态光谱法的AlGaN / GaN HEMT中缺陷的表征
Thales Alenia Space, Toulouse, France;
XLIM UMR 7252, Université de Limoges/CNRS, Limoges, France;
Thales Alenia Space, Toulouse, France;
Thales Alenia Space, Toulouse, France;
Department of Information Engineering, University of Padua, Padua, Italy;
XLIM UMR 7252, Université de Limoges/CNRS, Limoges, France;
Department of Information Engineering, University of Padua, Padua, Italy;
Department of Information Engineering, University of Padua, Padua, Italy;
XLIM UMR 7252, Université de Limoges/CNRS, Limoges, France;
Radio frequency; Temperature measurement; Current measurement; Transient analysis; HEMTs; MODFETs; Logic gates;
机译:随机电报噪声和低频噪声特性,AlGaN / GaN HEMT的漏极电流瞬态稳定性的漏极电流瞬态稳定性分析
机译:AlGaN / GaN HEMT中的漏极电流瞬态和低频色散特性
机译:硅基衬底上的AlGaN / GaN HEMT中的深能级通过电流深能级瞬态光谱学表征
机译:通过直流和漏极电流瞬态测量表征AlGaN / GaN HEMT中的扭结效应
机译:射频磁控溅射生长的GaN薄膜的特性用于制造AlGaN / GaN HEMT生物传感器
机译:使用AlGaN / GaN / AlGaN量子阱电子阻挡层的AlGaN / GaN HEMT中的高击穿电压
机译:随机电报噪声和低频噪声特性,AlGaN / GaN HEMT的漏极电流瞬态稳定性的漏极电流瞬态稳定性分析