A ignition pattern of taking plasma as excitation energy is a developing ignition technique for energetic materials,which parameters,such as plasma temperature and electron density,are very important for the illumination of ignition mechanism.As plasma generated by semiconductor bridge (SCB)is transient and small size.many measurement methods are unsuitable.Then SCB plasma temperature and electron density were diagnosed simultaneously with atomic emission spectroscopy (AES),which of 1.0 Ω are between 2 400 K and 3 800 K and 3.2 X 10~(14)～4.2 X 10~(14)cm~(-3) under the conditions of the discharge voltage of 16 V and the charge capacity of 47μF.It Was judged,whether discharge behaviors of the different type SCBs generate plasma,by space and time dimensions and AES.The investigated results can provide an effective method for diagnosing transient and small size plasma,theoretical instruction and reference basis for designing SCB and controlling ignition pattern, and diagnosis and judgement of plasma parameters for the other systems.%以等离子体为激发能量的点火方式是含能材料点火技术的一个发展方向,等离子体的基本参数如温度和电子密度对研究等离子体点火的机理是重要的参数.对于半导体桥(SCB)在一定放电条件下所产生的瞬态小尺寸等离子体,很多等离子体诊断方法不能适用.本研究利用原子发射光谱技术,同时获得SCB等离子体温度和电子密度随时间分布的诊断结果,在放电电压为16 V,充电电容为47μF条件下,1.0 Ω的SCB等离子体温度分布在2 400-3800 K之间,电子密度约为3.2 X 10~(14)～4.2×10~(14)个/cm~3左右.同时,依据等离子体成立的空间尺度和时间尺度条件,根据光谱诊断结果,判断不同型号的SCB的放电行为是否产生等离子体.本研究为瞬态小尺寸等离子体诊断提供了一种有效的方法,为SCB桥体的设计以及点火方式的控制提供了理论指导和参考依据,以及用于其它体系中等离子体参数的诊断及判断.
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