Germanium-Tin (GeSn) P-Channel Fin Field-Effect Transistor Fabricated on a Novel GeSn-on-Insulator Substrate

摘要

Germanium-tin (GeSn) p-channel fin field-effect transistor (p-FinFET) was realized on a novel GeSn-on-insulator (GeSnOI) substrate. The high-quality GeSnOI substrate was formed using direct wafer bonding technique and was layer-transferred from a 300-mm GeSn/Ge/Si donor wafer. Material quality was examined using atomic force microscopy, high-resolution transmission electron microscopy, Raman spectroscopy, and high-resolution X-ray diffraction. The fabricated GeSn p-FinFETs exhibit a small subthreshold swing (S) of 79 mV/decade at Vn_DSnof -0.05 V (by a device with Ln_CHnof 200 nm and Wn_Finnof 30 nm), good control of short channel effects, and high intrinsic transconductance (Gn_m,intn= 702 μS/μm at Vn_DSnof -0.5 V for Ln_CHnof 80 nm). Low-temperature mobility analysis was performed on the GeSn p-FinFETs. High effective hole mobility (μn_effn) (210 cmn^{2n/V·s at 290 K and 398 cmn2n/V·s at 5 K) is achieved. The GeSn p-FinFETs presented in this paper exhibit the highest Gn_m,intn/Sn_satnat Vn_DSnof -0.5 V for all the reported GeSn p-FETs to date.}