首页>
外国专利>
METHOD FOR FABRICATING A P-CHANNEL FIELD-EFFECT TRANSISTOR ON A SEMICONDUCTOR SUBSTRATE
METHOD FOR FABRICATING A P-CHANNEL FIELD-EFFECT TRANSISTOR ON A SEMICONDUCTOR SUBSTRATE
展开▼
机译:在半导体基板上制造P通道场效应晶体管的方法
展开▼
页面导航
摘要
著录项
相似文献
摘要
A p-channel field-effect transistor is formed on a semiconductor substrate. The transistor has an n-doped gate electrode, a buried channel, a p-doped source and a p-doped drain. The transistor is fabricated by a procedure in which, after an implantation for defining an n-type well, an oxidation is performed to form a gate-oxide layer and n-doped polysilicon is subsequently deposited. The latter is doped with boron or boron fluoride particles either in situ or by a dedicated implantation step. In a thermal process, the boron acceptors penetrate through the oxide layer into the substrate of the n-type well, where they form a p-doped zone, which serves for counter doping and sets the threshold voltage. This results in a steep profile that permits a shallow buried channel. The control of the number particles penetrating through the oxide layer is achieved by nitriding the oxide layer in an N2O atmosphere.
展开▼