A Global Shutter Wide Dynamic Range Soft X-Ray CMOS Image Sensor With Backside- Illuminated Pinned Photodiode, Two-Stage Lateral Overflow Integration Capacitor, and Voltage Domain Memory Bank

摘要

This article presents a prototype 22.4 mu m pixel pitch global shutter (GS) wide dynamic range (WDR) soft X-ray CMOS image sensor (sxCMOS). Backside-illuminated (BSI) pinned photodiodes with a 45-mu m thick Si substrate were introduced for low noise and high radiation hardness to high energy photons. Two-stage lateral overflow integration capacitor (LOFIC) and voltage domain memory bankwith high-densitySi trench capacitorswere introduced for WDR and for GS. The developed sxCMOS achieved maximum 21.9 Me- full well capacity with a single exposure 129 dB dynamic range by GS operation. Over 70% quantum efficiency (QE) toward soft X-ray was successfully achieved. The developed prototype sxCMOS is a step forward toward a 4 M pixel detector system to be utilized in next-generation synchrotron radiation facilities and X-ray free-electron lasers.