A Global Shutter Wide Dynamic Range Soft X-ray CMOS Image Sensor with BSI Pinned Photodiode, Two-stage LOFIC and Voltage Domain Memory Bank

摘要

A prototype 22.4μm pixel pitch global shutter wide dynamic range soft X-ray CMOS image sensor (sxCMOS) is presented. The sxCMOS employs backside-illuminated (BSI) pinned photodiode with a 45μm-thick Si substrate for low noise and high light resistance to high energy photons, two-stage LOFIC for wide dynamic range and voltage domain memory bank with high density capacitors for global shutter. The developed chip successfully demonstrated a high quantum efficiency (QE) toward soft X-ray with a single exposure 129dB dynamic range by global shutter.