首页> 外国专利> BACKSIDE ILLUMINATED IMAGE SENSORS WITH PIXELS THAT HAVE HIGH DYNAMIC RANGE, DYNAMIC CHARGE OVERFLOW, AND GLOBAL SHUTTER SCANNING

BACKSIDE ILLUMINATED IMAGE SENSORS WITH PIXELS THAT HAVE HIGH DYNAMIC RANGE, DYNAMIC CHARGE OVERFLOW, AND GLOBAL SHUTTER SCANNING

机译:背面照明图像传感器,具有高动态范围,动态充电溢出和全局快门扫描的像素

摘要

Image sensors may include backside illuminated global shutter pixels that are implemented using stacked substrates. To provide high dynamic range in the pixels, only a predetermined portion of charge that has been generated in the pixel photodiodes is kept and stored in the pixel photodiodes when the pixels are illuminated by high light levels. In the low light level illumination conditions, all of the accumulated charge is stored in the pixel photodiodes, thereby preserving high sensitivity and low noise. Dynamic charge overflow may be used to increase the high dynamic range. To achieve low noise operation in a global shutter scanning mode, dynamic charge overflow may be combined with correlated double sampling techniques. Dynamic charge overflow may be achieved using a transistor-based overflow device or using an n-p-n based overflow device.
机译:图像传感器可以包括使用堆叠基板实现的背面照明的全局快门像素。为了在像素中提供高动态范围,当像素被高光线照射时,仅在像素光电二极管中生成的预定部分已经生成并存储在像素光电二极管中。在低光电平照明条件下,所有累积电荷存储在像素光电二极管中,从而保持高灵敏度和低噪声。动态电荷溢出可用于增加高动态范围。为了在全局快门扫描模式下实现低噪声操作,可以与相关的双采样技术组合动态电荷溢出。可以使用基于晶体管的溢流装置或使用基于N-P-N的溢流装置来实现动态电荷溢出。

著录项

  • 公开/公告号US2021136299A1

    专利类型

  • 公开/公告日2021-05-06

    原文格式PDF

  • 申请/专利权人 SEMICONDUCTOR COMPONENTS INDUSTRIES LLC;

    申请/专利号US202117147194

  • 发明设计人 JAROSLAV HYNECEK;

    申请日2021-01-12

  • 分类号H04N5/355;H04N5/378;H04N5/369;H01L27/146;

  • 国家 US

  • 入库时间 2022-08-24 18:34:14

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