首页> 外文期刊>Electron Devices, IEEE Transactions on >Measurement and Analysis for Time Jitter of Reversely Switched Dynistor
【24h】

Measurement and Analysis for Time Jitter of Reversely Switched Dynistor

机译:反向切换达到晶体管时间抖动的测量与分析

获取原文
获取原文并翻译 | 示例

摘要

To evaluate the application prospects of reversely switched dynistor (RSD) in high-power microwave system, time jitters of RSD were measured, and some factors affecting the time jitter were also discussed. Helping to reduce errors in the results, a way of measuring time jitter of RSD was proposed for the first time in this article. Experiments were carried out, in which dc voltage (main voltage) varied from 300 to 700 V and the energy storage capacitor ( ${C}_{{0}}$ ) in the test circuit varied from 2 to $5~mu ext{F}$ . Experimental results showed that the time jitter was in the range of 0.57–1.57 ns and changed irregularly with the increase of ${C}_{{0}}$ but tended to increase with the decrease of main voltage. For the relationship between the time jitter and ${C}_{{0}}$ , the changing trend of fluctuation of current in RSD is the same as the changing trend of fluctuation of the RSD turn-on delay time and is almost not affected by ${C}_{{0}}$ , which indicates ${C}_{{0}}$ has little influence on time jitter of RSD. For the relationship between the time jitter and the main voltage, the decrease of main voltage leads to higher voltage fluctuation of RSD and longer RSD turn-on delay time, which together result in higher fluctuation of current in RSD. Consequently, we believed that the decrease of the main voltage leads to an increase of the time jitter.
机译:为了评估高功率微波系统中反向切换的Dynistor(RSD)的应用前景,测量RSD的时间夹具,并且还讨论了影响时间抖动的一些因素。帮助减少结果中的错误,在本文中首次提出了一种测量RSD的时间抖动的方式。进行实验,其中DC电压(主电压)从300到700 V和储能电容器(<内联公式XMLNS:MML =“http://www.w3.org/1998/math/mathml”xmlns:xlink =“http://www.w3.org/1999/xlink”> $ {C} _ {{0}} $ )在测试电路中,从2个变化<内联公式XMLNS:MML =“http://www.w3.org/1998/math/mathml”xmlns:xlink =“http://www.w3.org/1999/xlink”> $ 5〜 mu text {f} $ 。实验结果表明,时间抖动在0.57-1.57 ns的范围内,随着增加的增加而不规则地改变<内联公式XMLNS:MML =“http://www.w3.org/1998/math/mathml”xmlns:xlink =“http://www.w3.org/1999/xlink”> $ {C} _ {{0}} $ 但随着主电压的降低而倾向于增加。对于时间抖动与抖动之间的关系<内联公式XMLNS:MML =“http://www.w3.org/1998/math/mathml”xmlns:xlink =“http://www.w3.org/1999/xlink”> $ {C} _ {{0}} $ ,RSD中电流波动的变化变化与RSD导通延迟时间的波动趋势相同,几乎不受影响<内联公式XMLNS:MML =“http://www.w3.org/1998/math/mathml”xmlns:xlink =“http://www.w3.org/1999/xlink”> $ {C} _ {{0}} $ ,表示<内联公式XMLNS:MML =“http://www.w3.org/1998/math/mathml”xmlns:xlink =“http://www.w3.org/1999/xlink”> $ {C} _ {{0}} $ 对RSD的时间抖动影响不大。对于时间抖动与主电压之间的关系,主电压的降低导致RSD和较长RSD导通延迟时间的更高电压波动,从而在RSD中相处的电流波动较高。因此,我们认为主电压的降低导致时间抖动的增加。

著录项

  • 来源
    《Electron Devices, IEEE Transactions on》 |2020年第11期|5012-5019|共8页
  • 作者单位

    State Key Laboratory of Advanced Electromagnetic Engineering and Technology School of Electrical and Electronic Engineering Huazhong University of Science and Technology Wuhan China;

    State Key Laboratory of Advanced Electromagnetic Engineering and Technology School of Electrical and Electronic Engineering Huazhong University of Science and Technology Wuhan China;

    State Key Laboratory of Advanced Electromagnetic Engineering and Technology School of Electrical and Electronic Engineering Huazhong University of Science and Technology Wuhan China;

    State Key Laboratory of Advanced Electromagnetic Engineering and Technology School of Electrical and Electronic Engineering Huazhong University of Science and Technology Wuhan China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Jitter; Switches; Switching circuits; Delays; Semiconductor device measurement; Microwave circuits;

    机译:抖动;开关;切换电路;延迟;半导体器件测量;微波电路;

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号