Comparison of Dark Current Random Telegraph Signals in Silicon and InSb-Based Photodetector Pixel Arrays

摘要

In this work, the parasitic discrete fluctuation of dark current (dc) called random telegraph signal (RTS) is analyzed in image sensors based on two different semiconductor materials: InSb and silicon. The results show that this dc-RTS phenomenon exhibits similar characteristics on both technologies strongly suggesting a common physical origin. This conclusion is extended to InGaAs and HgCdTe (also referred to as MCT)-based image sensors by comparing the presented results to the existing literature.