An ON-Resistance Model for Silicon Carbide Merged p-i-n Schottky (MPS) Diodes

摘要

A novel resistance model of silicon-carbide-merged p-i-n Schottky diodes is presented in this article. With this model, the device characteristics and power dissipation can be predicted. The ON-resistance in the three operating modes, namely, unipolar, low-injection, and high-injection modes, is calculated. In the unipolar and low-injection modes, the effect of temperature on carrier mobility and conduction angle are added to the factors that need to be considered, whereas the influence of current density is considered in the high-injection mode. The carrier distribution in the high-injection mode is analyzed and applied to determine the resistance. And this resistance model is applied to the research of a forward characteristic model. The model is verified experimentally via the comparison of the calculated and measured characteristics. The experimental results prove that the model can not only predict the resistance in each working mode, but also accurately predict the forward current and voltage characteristics.