Vertical β-Ga₂O₃ Power Transistors: A Review

摘要

With projected performance advantages over silicon and incumbent wide-bandgap compound semiconductors, gallium oxide (Ga2O3) has garnered worldwide attention as an ultrawide-bandgap semiconductor material suitable for high-voltage, high-temperature, and radiation-hard electronics. Thanks to recent breakthroughs in crystal growth and device processing technologies, the research and development of vertically oriented Ga2O3 power transistors has made rapid strides. In this article, we review the important engineering achievements and performance milestones of the two major types of vertical Ga2O3 transistors-current aperture vertical metal-oxide-semiconductor field-effect transistors (MOSFETs) and vertical fin-channel MOSFETs. Challenges underlying the unique processing approaches to these devices and their implications on device reliability are also discussed.