Impacts of Ge Preamorphization Implantation and Si Capping on the Specific Contact Resistivity of Ni(Pt)SiGe/p

摘要

This article explores the impacts of both Ge preamorphization implantation (PAI) and Si capping on the specific contact resistivity (rho(c)) of Ni(Pt) SiGe/p(+)-SiGe contacts elaborately. BothGe PAI and Si capping are found to be beneficial in reducing the rho(c) of Ni(Pt) SiGe/p(+)-SiGe contacts remarkably, with rho(c) values reduced from the original 20.03x 10(-8) Omega-cm(2) to 9.92 x 10(-8) Omega-cm(2) with Ge PAI and 1.44 x 10(-8) Omega-cm(2) with Si capping, respectively. Improved interfacial uniformity and morphology are thought to be primarily responsible for such significant reductions in rho(c) since neither Ge PAI nor Si capping induces an obvious difference in B concentrations at the interface of Ni(Pt) SiGe/p+- SiGe. Moreover, by combining Ge PAI or Si capping with extra B implantation before germanosilicidation to intentionally introduce B dopant segregation (DS) at the interface of Ni(Pt) SiGe/p+- SiGe contacts, further reduction of rho(c) values is accomplished as anticipated.