On the manifestation of Ge pre-amorphization implantation (PAI) impact on both the formation of ultrathin TiSixand the specific contact resistivity in TiSix-Si contacts for sub-16/14 nm nodes and beyond

摘要

Owing to inherent advantages compared to Ni-based contacts adopted in previous nodes, ultrathin TiSix-Si (0x-Si Ohmic contacts has been utilized extensively, the aborative exploration of the impact of Ge PAI on both the formation of ultrathin TiSixand the electrical performance in TiSix-Si contacts is still of great interest and practical merit. We here investigate the impact of different Ge PAI conditions on the formation of ultrathin TiSixas well as on the specific contact resistivity (ρc) in TiSix-Si contacts systematically.