Improvements in the Electrical Performance of IC MOSFET Components Using Diamond Layout Style Versus Traditional Rectangular Layout Style Calculated by Conformal Mapping

D. Barri; P. Vacula; V. Kotě; J. Jakovenko; J. Voves

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Improvements in the Electrical Performance of IC MOSFET Components Using Diamond Layout Style Versus Traditional Rectangular Layout Style Calculated by Conformal Mapping

机译：使用共形映射计算的菱形布局样式与传统的矩形布局样式相比，IC MOSFET组件的电性能有所提高

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In the first part of this article, we have proposed an innovative approach to improve the drain current model of the MOSFETs implemented with the diamond layout style (DLS), regarding the longitudinal corner effect (LCE). The proposed model is more accura

机译：在本文的第一部分中，我们针对纵向转角效应（LCE）提出了一种创新的方法来改善采用菱形布局样式（DLS）实现的MOSFET的漏极电流模型。提出的模型更准确

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来源
《IEEE Transactions on Electron Devices》 |2019年第9期|3718-3725|共8页
作者
D. Barri; P. Vacula; V. Kotě; J. Jakovenko; J. Voves;
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作者单位

Department of Microelectronics Czech Technical University in Prague Prague Czech Republic;

Department of Microelectronics Czech Technical University in Prague;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);
原文格式 PDF
正文语种 eng
中图分类
关键词
MOSFET; Layout; Shape; Diamond; Conformal mapping; Integrated circuits;

机译：MOSFET;布局;形状;钻石;保形映射;集成电路;

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2. An Innovative Ellipsoidal Layout Style to Further Boost the Electrical Performance of MOSFETs [J] . Gimenez Salvador P., Correia Marcello M., Neto Enrico D., Electron Device Letters, IEEE . 2015,第7期

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3. Boosting the SOI MOSFET Electrical Performance by Using the Octagonal Layout Style in High Temperature Environment [J] . Egon Henrique Salerno Galembeck, Christian Renaux, Denis Flandre, IEEE transactions on device and materials reliability . 2017,第1期

机译：通过在高温环境中使用八边形布局样式来提高SOI MOSFET的电气性能
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Improvements in the Electrical Performance of IC MOSFET Components Using Diamond Layout Style Versus Traditional Rectangular Layout Style Calculated by Conformal Mapping

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