Computational Study of Geometrical Designs for Source/Drain Contacts to Reduce Parasitic Resistance in Extremely Scaled MOSFETs

摘要

Comprehensive simulation results are reported for the source/drain (S/D) geometry effects on the drive current of various n-type (Si, In0.53Ga0.47As, Ge) and p-type (Si, Ge) metal-oxide-semiconductor field-effect transistors (MOSFETs). Full-band Monte Carlo (MC) simulations are run for different S/D structures ("raised" versus "lateral") at a relevant International Technology Roadmap on Semiconductors node (gate length 14 nm). The "lateral" S/D gives higher drive currents (lower parasitic resistance) than the "raised" S/D because carriers do not need to make large momentum changes through scattering to get injected into the channel or to get collected by the drain, unlike in the "raised" S/D where 90 degrees-turns are required. The S/D geometry effect is significant for novel materials with light effective mass and low scattering rate (e.g., similar to 20% on-current change in In0.53Ga0.47As) while it is still not negligible (up to similar to 5%) for conventional Si. The effect is more pronounced with small contact resistivity and low-S/D doping density. The classical model (drift-diffusion) captures only a part of the S/D geometry effect. In MOSFET benchmarking for future technology nodes, it should be critical to consider the S/D structure effect using rigorous models (such as MC) to correctly project the drive current performance, especially for novel materials with high mobility.