IrSi Schottky-barrier infrared detectors with 10- mu m cutoff wavelength

摘要

IrSi Schottky-barrier detectors were fabricated with approximately 40-AA-thick silicide electrodes formed on p-type Si substrates by in situ processing in a conventional electron-beam evaporator. High-resolution transmission electron microscopy shows that these detectors have clean, abrupt silicide-Si interfaces. For operation at a reverse-bias voltage of 2 V, the cutoff wavelength is approximately 10 mu m, as determined by quantum efficiency measurements.