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HIGH OPERATING TEMPERATURE BARRIER INFRARED DETECTOR WITH TAILORABLE CUTOFF WAVELENGTH
HIGH OPERATING TEMPERATURE BARRIER INFRARED DETECTOR WITH TAILORABLE CUTOFF WAVELENGTH
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机译:具有可裁切截止波长的高温隔离栅红外探测器
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摘要
A barrier infrared detector with absorber materials having selectable cutoff wavelengths and its method of manufacture is described. A GaInAsSb absorber layer may be grown on a GaSb substrate layer formed by mixing GaSb and InAsSb by an absorber mixing ratio. A GaAlAsSb barrier layer may then be grown on the barrier layer formed by mixing GaSb and AlSbAs by a barrier mixing ratio. The absorber mixing ratio may be selected to adjust a band gap of the absorber layer and thereby determine a cutoff wavelength for the barrier infrared detector. The absorber mixing ratio may vary along an absorber layer growth direction. Various contact layer architectures may be used. In addition, a top contact layer may be isolated into an array of elements electrically isolated as individual functional detectors that may be used in a detector array, imaging array, or focal plane array.
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