Planar, linear GaAs detector-amplifier array with an insulating AlGaAs spacing layer between the detector and transistor layers

摘要

Monolithic, high-speed planar, linear, parallel channel, ten-element GaAs detector-amplifier arrays with a 70- mu m detector center-to-center spacing have been fabricated using a GaAs-AlGaAs-GaAs epitaxial structure grown on semi-insulating GaAs. The AlGaAs layer provided excellent electrical isolation between the transistor and n-type photoconductor epitaxial layers. Rise and fall times of integrated detector-amplifier array channels of 650 ps and 1.1 ns, respectively, were measured at 0.84- mu m wavelength. The sensitivity of single, discrete, detector-amplifier channels was better than -34 dBm.