In/sub 0.25/Ga/sub 0.75/As/AlAs-based resonant tunneling diodes grown on prepatterned and nonpatterned GaAs

Kapre R.; Madhukar A.

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In/sub 0.25/Ga/sub 0.75/As/AlAs-based resonant tunneling diodes grown on prepatterned and nonpatterned GaAs

机译：在预图案化和非图案化GaAs上生长的基于In / sub 0.25 / Ga / sub 0.75 / As / AlAs的共振隧穿二极管

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摘要

The DC current-voltage characteristics of strained In/sub 0.25/Ga/sub 0.75/As/AlAs resonant tunneling diode (RTD) structures grown on GaAs

机译：在GaAs上生长的应变In / sub 0.25 / Ga / sub 0.75 / As / AlAs谐振隧道二极管（RTD）结构的直流电流-电压特性

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《IEEE Electron Device Letters》 |1990年第6期|P.270-272|共3页
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Kapre R.; Madhukar A.;
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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);
原文格式 PDF
正文语种 eng
中图分类一般性问题;
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专利

1. Critical layer thickness study in In_0.75Ga_0.25As/In_0.5Al_0.5As pseudomorphic resonant tunneling diode structure grown on GaAs substrates [J] . Shin-ichiro Gozu, Tomohiro Kita, Tomoyuki Kikutani Journal of Crystal Growth . 2001,第期

机译：在GaAs衬底上生长的In_0.75Ga_0.25As / In_0.5Al_0.5As伪形谐振隧道二极管结构中的关键层厚度研究
2. Quantum-well Hall devices in Si-delta-doped Al/sub 0.25/Ga/sub 0.75/As/GaAs and pseudomorphic Al/sub 0.25/Ga/sub 0.75/As/In/sub 0.25/Ga/sub 0.75/As/GaAs heterostructures grown by LP-MOCVD: performance comparisons [J] . Jeong-Soo Lee, Kwang-Ho Ahn IEEE Transactions on Electron Devices . 1996,第10期

机译：掺Siδ的Al / sub 0.25 / Ga / sub 0.75 / As / GaAs和拟晶Al / sub 0.25 / Ga / sub 0.75 / As / In / sub 0.25 / Ga / sub 0.75 / As /中的量子阱霍尔器件LP-MOCVD生长的GaAs异质结构：性能比较
3. Metamorphic Ga0.76In0.24As/GaAs0.75Sb0.25 tunnel junctions grown on GaAs substrates [J] . Garcia I., Geisz J.F., France R.M., Journal of Applied Physics . 2014,第7期

机译：在GaAs衬底上生长的变质Ga 0.76 In 0.24 As / GaAs 0.75 Sb 0.25 隧道结
4. Critical layer thickness study in In_(0.75)Ga_(0.25)As/In_(0.5)Al_(0.5)As pseudomorphic resonant tunneling diode structure grown on GaAs substrates [C] . Syoji Yamada, Tomoyuki Kikutani, Tomohiro Kita, International conference on molecular beam epitaxy . 2001

机译：作为/ IN_（0.5）GA_（0.25）的临界层厚度研究在GaAs基板上生长的假形谐振隧道二极管结构，如/ in_（0.5）AS / IN_（0.5）AL_（0.5）
5. NEGF simulation of electron transport in resonant tunneling and resonant interband tunneling diodes [D] . Akkala, Arun Goud 2011

机译：共振隧穿和带内隧穿二极管中电子传输的NEGF模拟
6. Low Al-composition p-GaN/Mg-doped Al0.25Ga0.75N+-GaN polarization-induced backward tunneling junction grown by metal-organic chemical vapor deposition on sapphire substrate [O] . Kexiong Zhang, Hongwei Liang, Yang Liu, -1

机译：金属有机化学气相沉积在蓝宝石衬底上生长的低Al成分p-GaN / Mg掺杂Al0.25Ga0.75N / n + -GaN极化诱导的反向隧穿结
7. A comparative study of uniaxial pressure effects in intraband AlGaAs/GaAs and interband InAs/AlSb/GaSb resonant tunneling diodes [O] . Mutamba K, Sigurdardottir A, Vogt A, 1998

机译：带内alGaas / Gaas和带间Inas / alsb / Gasb共振隧穿二极管的单轴压力效应对比研究
8. In(0.25)Ga(0.75)As/AlAs-Based Resonant Tunneling Diodes Grown on Prepatterned andNon-Patterned GaAs (100) Substrates [R] . Kapre, R., Madhukar, A., Guha, S. 1990

机译：在预图案化和非图案化Gaas（100）衬底上生长的（0.25）Ga（0.75）as / alas基谐振隧道二极管

In/sub 0.25/Ga/sub 0.75/As/AlAs-based resonant tunneling diodes grown on prepatterned and nonpatterned GaAs

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