An ion-implanted diamond metal-insulator-semiconductor field-effect transistor

摘要

A p-type conducting layer has been formed in a substrate of semi-insulating natural diamond (type IIa) by boron implantation. Silicon dioxide was deposited over this layer to make an insulated-gate field-effect transistor. Saturation and pinch-off were both observed at room temperature. The transconductance was 3.9 mu S-mm/sup -1/ and the output conductance was 60 nS-mm/sup -1/. This is the first reported use of ion implantation to successfully fabricate a field-effect device in diamond.