Ion-Implanted Diamond Metal-Insulator-Semiconductor Field Effect Transistor

摘要

A p-type conducting layer has been formed in a substrate of semi-insulatingnatural diamond (type IIa) by boron implantation. Silicon dioxide was deposited over this layer to make an insulated-gate field-effect transistor. Saturation and pinch-off were both observed at room temperature. The transconductance was 3.9 micro S mm-1 and the outside conductance was 6OnS mm-1. This is the first reported use of ion implantation to successfully fabricate a field-effect device in diamond. semiconducting diamond.