39.5-GHz static frequency divider implemented in AlInAs/GaInAs HBT technology

摘要

A static divide-by-4 frequency divider operating at 39.5 GHz with a corresponding gate delay of 12.6 ps was implemented using InP-based HBT technology. The AlInAs/GaInAs HBT devices utilized in the divider incorporated a graded emitter-base (E-B) junction and had a unity gain cutoff frequency, maximum frequency of oscillation, and current gain beta of 130 GHz, 91 GHz, and 39, respectively. The divider was operated with a 3-V power supply and consumed a total power of 425 mW (77 mW per flip-flop). The divider functional yield was over 90%. The operating frequency of this circuit is the highest ever reported for a static divider.