High-performance polysilicon contacted shallow junctions formed by stacked-amorphous-silicon films

Wu S.L.; Lee C.-L.

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High-performance polysilicon contacted shallow junctions formed by stacked-amorphous-silicon films

机译：叠层非晶硅膜形成的高性能多晶硅接触浅结

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A high-performance polysilicon contacted shallow junction diode formed by using a stacked-amorphous-silicon (SAS) film as the diffusion source is reported. The diode exhibited a very low leakage current (>or=1 nA/cm/sup 2/ at -5 V), a very high breakdown voltage (or=1.05 over seven decades.

机译：报道了一种高性能的多晶硅接触浅结二极管，该二极管通过使用堆叠非晶硅（SAS）膜作为扩散源形成。二极管在-5 V时表现出非常低的泄漏电流（>或= 1 nA / cm / sup 2 /，在-5 V时），非常高的击穿电压（<或= 100 V），正向理想系数m>或= 1.05 over七十年。

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《IEEE Electron Device Letters》 |1992年第1期|P.23-25|共3页
作者
Wu S.L.; Lee C.-L.;
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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);
原文格式 PDF
正文语种 eng
中图分类一般性问题;
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专利

1. Characteristics of polysilicon contacted shallow junction diode formed with a stacked-amorphous-silicon film [J] . Wu S.-L., Lee C.-L. IEEE Transactions on Electron Devices . 1993,第10期

机译：叠层非晶硅膜形成的多晶硅接触浅结二极管的特性
2. Low-temperature growth of silicon-boron layer as solid diffusion source for polysilicon contacted p/sup +/-n shallow junction [J] . Tan Fu Lei, Tang Po Chen IEEE Transactions on Electron Devices . 1995,第12期

机译：多晶硅接触p / sup +/- n浅结的固体扩散源硅硼层的低温生长
3. Gate overlap length reduction and shallow junction formation in high-performance fine MOSFETs by ion implantation through thin oxide film [J] . Oishi T., Furukawa A. Electronics Letters . 1998,第25期

机译：通过薄氧化膜离子注入，在高性能精细MOSFET中减少栅极重叠长度并形成浅结
4. Low Resistivity Nickel Germanosilicide Contacts to Ultra-shallow Junctions Formed by the Selective Si_(1-x)Ge_x Technology for Nanoscale CMOS [C] . Jing Liu, Hongxiang Mo, Mehmet C. Oeztuerk Symposium on CMOS Front - End Materials and Process Technology; 20030422-20030424; San Francisco,CA; US . 2003

机译：低电阻率的锗硅化镍与超浅结的接触，该浅结由用于纳米级CMOS的选择性Si_（1-x）Ge_x技术形成
5. Germanosilicide contacts to ultra-shallow p(+)n junctions of nanoscale CMOS integrated circuits by selective deposition of in-situ doped silicon-germanium alloys. [D] . Liu, Jing. 2003

机译：锗硅化物通过选择性沉积原位掺杂的硅锗合金与纳米级CMOS集成电路的超浅p（+）n结接触。
6. Towards manufacturing high uniformity polysilicon circuits through TFT contact barrier engineering [O] . Radu A. Sporea, Luke J. Wheeler, Vlad Stolojan, -1

机译：通过TFT接触势垒工程技术制造高均匀度多晶硅电路
7. High-Performance Short-Channel Double-Gate Low-Temperature Polysilicon Thin-Film Transistors Using Excimer Laser Crystallization [O] . Chun-Chien Tsai, Kai-Fang Wei, Yao-Jen Lee, 2007

机译：高性能短通道双栅极低温多晶硅薄膜晶体管使用准分子激光结晶
8. Ion Implantation Technique for Simultaneous Formation of a Shallow Silicon p-n Junction and a Shallow Silicide-Silicon Ohmic Contact. [R] . Tsaur, B. Y., Anderson, C. H. 1983

机译：离子注入技术同时形成浅硅p-n结和浅硅化物 - 硅欧姆接触。

High-performance polysilicon contacted shallow junctions formed by stacked-amorphous-silicon films

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