Low-defect-density and high-reliability FETMOS EEPROM's fabricated using furnace N/sub 2/O oxynitridation

摘要

The superior characteristics of floating-gate electron tunneling MOS (FETMOS) EEPROMs fabricated using a furnace N/sub 2/O oxynitridation process are described. These devices exhibited about eight times better endurance and good data retention characteristics while maintaining defect density comparable to that of the control thermal oxide devices. These devices also showed very good thickness uniformity across the wafer and wafer-to-wafer.